The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jun. 19, 2008
Frederic Mayer, Voiron, FR;
Laurent Clavelier, St. Egreve, FR;
Thierry Poiroux, Voiron, FR;
Gerard Billiot, St. Nazaire les Eymes, FR;
Frederic Mayer, Voiron, FR;
Laurent Clavelier, St. Egreve, FR;
Thierry Poiroux, Voiron, FR;
Gerard Billiot, St. Nazaire les Eymes, FR;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A field effect transistor including: a support layer, a plurality of active zones based on a semiconductor, each active zone configured to form a channel and arranged between two gates adjacent to each other and consecutive, the active zones and the gates being arranged on the support layer, each gate including a first face on the side of the support layer and a second face opposite the first face. The second face of a first of the two gates is electrically connected to a first electrical contact made on the second face of the first of the two gates, and the first face of a second of the two gates is electrically connected to a second electrical contact passing through the support layer. The gates of the transistor are not electrically connected to each other.