logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8866202 B1

PDFFull Text
Date of Patent:
Oct. 21, 2014

Filed:

Apr. 26, 2012

Device with gaps for capacitance reduction

Applicants:

S. M. Reza Sadjadi, Saratoga, CA (US);

Zhi-song Huang, Fremont, CA (US);

Inventors:

S. M. Reza Sadjadi, Saratoga, CA (US);

Zhi-Song Huang, Fremont, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:

Beyer Law Group LLP

Primary Examiner:

Charles Garber

Assistant Examiner:

Ron Pompey

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 21/768 (2006.01); H01L 23/482 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 23/4821 (2013.01); H01L 21/0337 (2013.01); H01L 21/76843 (2013.01); H01L 21/31144 (2013.01); H01L 21/0338 (2013.01);
Abstract

A method for reducing capacitances between semiconductor devices is provided. A plurality of contact structures is formed in a dielectric layer. A mask is formed to cover the contact structures wherein the mask has mask features for exposing parts of the dielectric layer wherein the mask features have widths. The widths of the mask features are shrunk with a sidewall deposition. Gaps are etched into the dielectric layer through the sidewall deposition. The gaps are closed to form pockets in the gaps.

Find Patent Forward Citations

Sadjadi, S. M. Reza. (2014). Device with gaps for capacitance reduction (U.S. Patent No. 8866202). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8866202

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…