The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Feb. 20, 2013
Epistar Corporation, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Ching-San Tao, Hsinchu, TW;
Chen Ou, Hsinchu, TW;
Min-Hsun Hsieh, Hsinchu, TW;
Chao Hsing Chen, Hsinchu, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
A light-emitting device having a light-emitting stacked layer with a first conductivity type semiconductor layer is provided. A light-emitting layer is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer is formed on the light-emitting layer. The upper surface of the second conductivity type semiconductor layer is a textured surface. A planarization layer is formed on a first part of the second conductivity type semiconductor layer. A transparent conductive oxide layer is formed on the planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion on the planarization layer and a second portion having a first plurality of cavities on the second conductivity type semiconductor layer. An electrode is formed on the first portion of the transparent conductive oxide layer, and a reflective metal layer is formed between the transparent conductive oxide layer and the electrode.