The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jan. 02, 2013
Junichi Koike, Sendai, JP;
Pilsang Yun, Sendai-shi, KR;
Hideaki Kawakami, Chiba, JP;
Advanced Interconnect Materials, LLC, Miyagi, JP;
Abstract
Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistorof the present invention includes a semiconductor layercomposed of oxide semiconductor, a source electrodeand a drain electrodethat are layers composed mainly of copper, and oxide reaction layersprovided between the semiconductor layerand each of the source electrodeand drain electrode, and high-conductance layersprovided between the oxide reaction layersand semiconductor layer