The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Feb. 26, 2013
Semiconductor Manufacturing International Corp., Shanghai, CN;
Fumitake Mieno, Shanghai, CN;
Semiconductor Manufacturing International Corp., Shanghai, CN;
Abstract
A fin field effect transistor and a method for forming the fin field effect transistor are provided. In an exemplary method, the Fin FET can be formed by forming a dielectric layer and a fin on a semiconductor substrate. The fin can be formed throughout an entire thickness of the dielectric layer and a top surface of the fin is higher than a top surface of the dielectric layer. The fin can be annealed using a hydrogen-containing gas and a repairing gas containing at least an element corresponding to a material of the fin. A gate structure can be formed on the top surface of the dielectric layer and at least on sidewalls of a length portion of the fin after the annealing process.