The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
May. 20, 2013
Micron Technology, Inc., Boise, ID (US);
Lifang Xu, Boise, ID (US);
Zaiyuan Ren, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride ('GaN') material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride ('InGaN')/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile