The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

May. 05, 2008
Applicant:

Masao Furuya, Yamanashi, JP;

Inventor:

Masao Furuya, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); C23F 1/00 (2006.01); H01J 37/32 (2006.01); C23C 16/455 (2006.01); G05D 23/19 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 21/67248 (2013.01); H01J 37/32724 (2013.01); C23C 16/45572 (2013.01); H01J 37/32091 (2013.01); G05D 23/19 (2013.01);
Abstract

Before a substrate is processed in a plasma processing apparatus that inhibits an increase in the temperature of an upper electrode attributable to DC voltage application as well as an increase in the upper electrode temperature attributable to high-frequency power application, a heating medium target temperature to be achieved by a heating medium in order to adjust the upper electrode temperature to a predetermined temperature setting is calculated based upon the levels of the high-frequency power to be applied to the upper electrode and a susceptor (lower electrode) and the DC voltage to be applied to the upper electrode. During the substrate processing, the heating medium, the temperature of which is controlled based upon the target temperature, circulates through a flow passage formed at the upper electrode so as to control the temperature of the upper electrode.


Find Patent Forward Citations

Loading…