The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Jul. 02, 2013
Applicant:

Unisantis Electronics Singapore Pte. Ltd., Peninsula Plaza, SG;

Inventors:

Fujio Masuoka, Tokyo, JP;

Tomohiko Kudo, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/66742 (2013.01); H01L 29/78642 (2013.01); H01L 29/0878 (2013.01); H01L 29/42392 (2013.01); H01L 29/086 (2013.01); H01L 29/78618 (2013.01); H01L 29/66666 (2013.01); H01L 29/42356 (2013.01); H01L 21/26586 (2013.01);
Abstract

A semiconductor device includes a first pillar, a second pillar underneath the first pillar, and a third pillar on a top of the first pillar. The second pillar has a second-conductive type region in a surface thereof except at least a part of a contact surface region with the first pillar, and a first-conductive type region therein and surrounded by the second-conductive type region. The third pillar has a second-conductive type region in a surface thereof except at least a part of a contact surface region with the first pillar, and a first-conductive type region therein and surrounded by the second-conductive type region. The first-conductive type region of each of the second pillar and the third pillar has a length greater than that of a depletion layer extending from a base portion of the second-conductive type region of a respective one of the second pillar and the third pillar.


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