The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Mar. 14, 2014
Applicant:
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Inventors:
Anup Bhalla, Mounmouth Junction, NJ (US);
Peter Alexandrov, Monmouth Junction, NJ (US);
Assignee:
United Silicon Carbide, Inc., Monmouth Junction, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/80 (2006.01); H01L 31/062 (2012.01); H01L 21/337 (2006.01); H01L 21/336 (2006.01); H01L 29/808 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8083 (2013.01); H01L 29/66909 (2013.01); H01L 29/1608 (2013.01);
Abstract
The present disclosure describes structures and processes to produce high voltage JFETs in wide-bandgap materials, most particularly in Silicon Carbide. The present disclosure also provides for products produced by the methods of the present disclosure and for apparatuses used to perform the methods of the present disclosure.