The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
May. 13, 2013
Applicant:
Sensors Unlimited, Inc., West Trenton, NJ (US);
Inventor:
John Alfred Trezza, Manalapan, NJ (US);
Assignee:
Sensors Unlimited, Inc., West Trenton, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 31/112 (2006.01); H01L 31/11 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 31/105 (2006.01); H01L 27/146 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1129 (2013.01); H01L 33/0016 (2013.01); H01L 31/105 (2013.01); H01L 27/14649 (2013.01); H01L 31/1123 (2013.01); H01L 31/1105 (2013.01); H01L 31/1844 (2013.01); H01L 31/1075 (2013.01);
Abstract
A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells.