The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Apr. 02, 2014
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 27/14 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 29/78651 (2013.01); H01L 27/1274 (2013.01);
Abstract
A thin-film transistor device includes a gate electrode formed above a substrate, a gate insulating film formed on the gate electrode, a crystalline silicon thin film that is formed above the gate insulating film and has a channel region, an amorphous silicon thin film formed on the crystalline silicon thin film, and a source electrode and a drain electrode that are formed above the channel region, and the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 or more and less than 6.0 cm, and an average crystal grain size of about 50 nm or more and 300 nm or less.