The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Oct. 26, 2007
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, BE;
Thibault Kervyn DE Meerendre, Brussels, BE;
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, BE;
Thibault Kervyn De Meerendre, Brussels, BE;
Dow Corning Corporation, Midland, MI (US);
Ecole Polytechnique, Palaiseau, FR;
Abstract
An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope.