The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jan. 13, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/788 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28273 (2013.01); H01L 29/7881 (2013.01); H01L 29/513 (2013.01); H01L 29/66825 (2013.01); H01L 29/518 (2013.01); H01L 29/42324 (2013.01);
Abstract
The present invention provides a manufacturing method of a non-volatile memory including forming a gate dielectric layer on a substrate; forming a floating gate on the gate dielectric layer; forming a first charge blocking layer on the floating gate; forming a nitride layer on the first charge blocking layer; forming a second charge blocking layer on the nitride layer; forming a control gate on the second charge blocking layer; and performing a treatment to the nitride layer to get a higher dielectric constant.