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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8859051 B1

PDFFull Text
Date of Patent:
Oct. 14, 2014

Filed:

May. 28, 2009

Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof

Applicants:

Jun Fujii, Naka, JP;

Hideaki Sakurai, Naka, JP;

Takashi Noguchi, Naka, JP;

Nobuyuki Soyama, Sanda, JP;

Inventors:

Jun Fujii, Naka, JP;

Hideaki Sakurai, Naka, JP;

Takashi Noguchi, Naka, JP;

Nobuyuki Soyama, Sanda, JP;

Assignee:

Mitsubishi Materials Corporation, Tokyo, JP;

Attorney:

Edwards Wildman Palmer LLP

Primary Examiner:

Erma Cameron

Int. Cl.
CPC ...
B05D 3/02 (2006.01); H01B 3/14 (2006.01); C04B 24/40 (2006.01); C04B 24/42 (2006.01); C04B 35/624 (2006.01); H01L 41/18 (2006.01); B05D 3/04 (2006.01); C01G 25/00 (2006.01); C23C 18/12 (2006.01); H01G 4/12 (2006.01); H01G 4/20 (2006.01); H01L 21/02 (2006.01); H01L 21/316 (2006.01); H01L 41/318 (2013.01); C04B 35/491 (2006.01); C04B 35/493 (2006.01); C04B 35/632 (2006.01); C04B 111/92 (2006.01); H01L 27/115 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01B 3/14 (2013.01); C04B 24/40 (2013.01); C04B 24/42 (2013.01); C04B 2111/92 (2013.01); C04B 2235/44 (2013.01); C04B 35/624 (2013.01); H01L 41/18 (2013.01); B05D 3/02 (2013.01); B05D 3/0209 (2013.01); B05D 3/04 (2013.01); B05D 3/0406 (2013.01); B05D 3/0413 (2013.01); C01G 25/006 (2013.01); C01P 2002/50 (2013.01); C01P 2006/40 (2013.01); C23C 18/1204 (2013.01); C23C 18/1225 (2013.01); C23C 18/1279 (2013.01); H01G 4/1245 (2013.01); H01G 4/206 (2013.01); H01L 21/02197 (2013.01); H01L 21/02282 (2013.01); H01L 21/31691 (2013.01); H01L 27/11502 (2013.01); H01L 28/55 (2013.01); H01L 41/318 (2013.01); C04B 35/491 (2013.01); C04B 35/493 (2013.01); C04B 35/632 (2013.01); C04B 35/6325 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/3298 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/441 (2013.01); C04B 2235/443 (2013.01); C04B 2235/447 (2013.01); C04B 2235/449 (2013.01); C04B 2235/6585 (2013.01);
Abstract

Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbLa)(ZrTi)O[wherein 0.9<x<1.3, 0≦y<0.1, and 0≦z<0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CHCOOH [wherein 3≦n≦7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

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