The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jun. 11, 2012
Applicants:

Anantha Raman Krishnan, Irvine, CA (US);

Shayan S. Garani, Irvine, CA (US);

Kent D. Anderson, Broomfield, CO (US);

Shafa Dahandeh, Laguna Niguel, CA (US);

Inventors:

Anantha Raman Krishnan, Irvine, CA (US);

Shayan S. Garani, Irvine, CA (US);

Kent D. Anderson, Broomfield, CO (US);

Shafa Dahandeh, Laguna Niguel, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/42 (2006.01); H03M 13/29 (2006.01); G11C 29/54 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1076 (2013.01); G06F 11/1008 (2013.01); H03M 13/2957 (2013.01);
Abstract

A data storage device is disclosed comprising a non-volatile memory (NVM). First data is written to a first area of the NVM, and a first estimated data sequence is read from the first area of the NVM. The first estimated data sequence is first decoded, and a log-likelihood ratio (LLR) is first updated based on the first decode. Second data is written to a second area of the NVM, and a second estimated data sequence is read from the second area of the non-volatile memory. The second estimated data sequence is second decoded in response to the first updated LLR, and the LLR is second updated based on the second decode.


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