The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Mar. 13, 2012
Magnetoresistive random access memory (mram) die including an integrated magnetic security structure
Applicants:
Romney R. Katti, Shorewood, MN (US);
James L. Tucker, Clearwater, FL (US);
Anuj Kohli, Apple Valley, MN (US);
Inventors:
Romney R. Katti, Shorewood, MN (US);
James L. Tucker, Clearwater, FL (US);
Anuj Kohli, Apple Valley, MN (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An MRAM die may include a first write line, a second write line, an MRAM cell disposed between the first write line and the second write line, and a magnetic security structure adjacent to the MRAM cell. The magnetic security structure may include a permanent magnetic layer and a soft magnetic layer.