The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jan. 22, 2009
Applicant:
Adalberto Cantoni, San Jose, CA (US);
Inventor:
Adalberto Cantoni, San Jose, CA (US);
Assignee:
STMicroelectronics Inc., Coppell, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/522 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 23/5225 (2013.01); H01L 2924/3011 (2013.01);
Abstract
Mutual capacitances between regions of a MOS device become substantial factors that limit the speed and performance of the device as the device dimensions are reduced in size. A MOS transistor with a shielding structure formed above the gate is described. The shielding structure is connected to ground and is configured to reduce at least some of these mutual capacitances.