The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jan. 19, 2012
Shigeaki Sumiya, Handa, JP;
Makoto Miyoshi, Inazawa, JP;
Tomohiko Sugiyama, Nagoya, JP;
Mikiya Ichimura, Ichinomiya, JP;
Yoshitaka Kuraoka, Anjo, JP;
Mitsuhiro Tanaka, Handa, JP;
Shigeaki Sumiya, Handa, JP;
Makoto Miyoshi, Inazawa, JP;
Tomohiko Sugiyama, Nagoya, JP;
Mikiya Ichimura, Ichinomiya, JP;
Yoshitaka Kuraoka, Anjo, JP;
Mitsuhiro Tanaka, Handa, JP;
NGK Insulators, Ltd., Aichi, JP;
Abstract
An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InAlGaN (xx+yy+zz=1, 0≦xx≦1, 0<yy≦1 and 0<zz≦1) on the first group-III nitride layer; and at least one third group-III nitride layer epitaxially-formed on the second group-III nitride layer, wherein: the first group-III nitride layer is a layer containing multiple defects including at least one type of a columnar crystal, a granular crystal, a columnar domain and a granular domain; and an interface between the first group-III nitride layer and the second group-III nitride layer is a three-dimensional asperity surface.