The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jan. 20, 2009
Applicants:

Kamal Tabatabaie, Sharon, MA (US);

Jeffrey R. Laroche, Lowell, MA (US);

Valery S. Kaper, Winchester, MA (US);

John P. Bettencourt, Danvers, MA (US);

Kelly P. Ip, Lowell, MA (US);

Inventors:

Kamal Tabatabaie, Sharon, MA (US);

Jeffrey R. LaRoche, Lowell, MA (US);

Valery S. Kaper, Winchester, MA (US);

John P. Bettencourt, Danvers, MA (US);

Kelly P. Ip, Lowell, MA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01S 5/183 (2006.01); H01S 5/026 (2006.01); H01L 27/06 (2006.01); H01S 5/22 (2006.01); H01S 5/022 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0261 (2013.01); H01S 5/2214 (2013.01); H01S 5/02248 (2013.01); H01S 5/021 (2013.01); H01S 5/183 (2013.01); H01L 27/0617 (2013.01); H01S 5/0262 (2013.01); H01S 2301/173 (2013.01);
Abstract

A semiconductor structure, comprising: a substrate; a seed layer over an upper surface of the substrate; a semiconductor layer disposed over the seed layer; a transistor device in the semiconductor layer; wherein the substrate has an aperture therein, such aperture extending from a bottom surface of the substrate and terminating on a bottom surface of the seed layer; and an opto-electric structure disposed on the bottom surface of the seed layer.


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