The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jun. 03, 2013
Applicant:

Power Integrations, Inc., San Jose, CA (US);

Inventor:

Michael S. Mazzola, Starkville, MS (US);

Assignee:

Power Integrations, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H03K 17/78 (2006.01); H01L 31/028 (2006.01); H01L 31/09 (2006.01); H01L 31/11 (2006.01);
U.S. Cl.
CPC ...
H01L 31/028 (2013.01); H03K 17/78 (2013.01); H01L 31/0312 (2013.01); H01L 31/09 (2013.01); H01L 31/1105 (2013.01); Y10S 438/917 (2013.01); Y10S 438/931 (2013.01);
Abstract

An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.


Find Patent Forward Citations

Loading…