The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Sep. 25, 2013
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Stanislav S. Todorov, Topsfield, MA (US);
George M. Gammel, Marblehead, MA (US);
Richard Allen Sprenkle, South Hamilton, MA (US);
Norman E. Hussey, Middleton, MA (US);
Frank Sinclair, Boston, MA (US);
Shengwu Chang, South Hamilton, MA (US);
Joseph C. Olson, Beverly, MA (US);
David Roger Timberlake, Lexington, MA (US);
Kurt T. Decker-Lucke, Hamilton, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.