The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Oct. 21, 2012
Applicant:
Lumigntech Co., Ltd., Seoul, KR;
Inventors:
Hae Yong Lee, Yongin-si, KR;
Young Jun Choi, Seoul, KR;
Jin Hun Kim, Seoul, KR;
Hyun soo Jang, Yongin-si, KR;
Hea Kon Oh, Gwangmyeong-si, KR;
Hyun Hee Hwang, Busan, KR;
Assignee:
Lumigntech Co., Ltd., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01); C30B 25/00 (2006.01); C30B 25/10 (2006.01); H01L 21/02 (2006.01); C30B 29/40 (2006.01); C30B 25/02 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02656 (2013.01); C30B 25/10 (2013.01); H01L 21/0254 (2013.01); C30B 29/403 (2013.01); H01L 21/02488 (2013.01); H01L 21/02664 (2013.01); C30B 25/02 (2013.01); H01L 21/02002 (2013.01); C30B 25/183 (2013.01); H01L 21/0262 (2013.01);
Abstract
The present invention is directed to a method of manufacturing a substrate, which includes loading a base substrate into a reaction furnace; forming a buffer layer on the base substrate; forming a separation layer on the buffer layer; forming a semiconductor layer on the separation layer at least two; and separating the semiconductor layer from the base substrate via the separation layer through natural cooling by unloading the base substrate from the reaction furnace.