The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Feb. 16, 2012
Applicants:
Nan LU, San Jose, CA (US);
Chien-lan Hsueh, Campbell, CA (US);
Inventors:
Nan Lu, San Jose, CA (US);
Chien-Lan Hsueh, Campbell, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A single TiON film is used to form a ReRAM device by varying the oxygen and nitrogen content throughout the device to form the electrodes and switching layer. A ReRAM device that can be formed in a single deposition chamber is also disclosed. The ReRAM device can be formed by forming a first titanium nitride layer, forming a titanium oxynitride-titanium oxide-titanium oxynitride layer, and then forming a second titanium nitride.
Lu, Nan. (2014). Using tion as electrodes and switching layers in reram devices (U.S. Patent No. 8853046). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8853046
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile