The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Jul. 21, 2011
Applicants:

Marie Denison, Plano, TX (US);

Sameer Pendharkar, Allen, TX (US);

Philip L. Hower, Concord, MA (US);

John Lin, Chelmsford, MA (US);

Inventors:

Marie Denison, Plano, TX (US);

Sameer Pendharkar, Allen, TX (US);

Philip L. Hower, Concord, MA (US);

John Lin, Chelmsford, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/66734 (2013.01); H01L 29/66719 (2013.01); H01L 29/42368 (2013.01);
Abstract

An electronic device has a plurality of trenches formed in a semiconductor layer. A vertical drift region is located between and adjacent the trenches. An electrode is located within each trench, the electrode having a gate electrode section and a field plate section. A graded field plate dielectric having increased thickness at greater depth is located between the field plate section and the vertical drift region.


Find Patent Forward Citations

Denison, Marie. (2014). Method of making vertical transistor with graded field plate dielectric (U.S. Patent No. 8853029). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8853029

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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