The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Jan. 29, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Abstract
A method for stressing a pattern having a pattern surface, in a layer of semiconductive material that can be silicon on the surface of a stack of layers generated on the surface of a substrate, said stack comprising at least one stress layer of alloy SiGewith x and y being molar fractions, and a buried layer of silicon oxide, comprises: etching at the periphery of a surface of dimensions greater than said pattern surface, of the buried layer of silicon oxide and layer of alloy SiGeover a part of the depth of said layer of alloy; the buried layer of silicon oxide being situated between said layer of semiconductive material and said stress layer of alloy SiGe. In a transistor structure, etching at the periphery of said surface obtains a pattern thus defined having dimensions greater than the area of interest situated under the gate of the transistor.