The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Aug. 20, 2012
Applicants:

Wei-lin Chen, Changhua County, TW;

Chih-chung Wang, Hsinchu, TW;

Chiu-te Lee, Hsinchu County, TW;

Ke-feng Lin, Taipei, TW;

Inventors:

Wei-Lin Chen, Changhua County, TW;

Chih-Chung Wang, Hsinchu, TW;

Chiu-Te Lee, Hsinchu County, TW;

Ke-Feng Lin, Taipei, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 31/02366 (2013.01);
Abstract

A method of fabricating a solar cell includes the following steps. At first, a substrate including a doped layer is provided. Subsequently, a patterned material layer partially overlapping the doped layer is formed on the substrate, and a first metal layer is conformally formed on the patterned material layer and the doped layer. Furthermore, a patterned mask layer totally overlapping the patterned material layer is formed on the first metal layer, and a second metal layer is formed on the doped layer not overlapped by the patterned material layer. Then, the patterned mask layer, the first metal layer between the patterned mask layer and the patterned material layer and a part of the patterned material layer are removed.


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