The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Feb. 15, 2013
Liang LI, Singapore, SG;
Zheng Zou, Singapore, SG;
Huang Liu, Singapore, SG;
Alex See, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
Methods of deducing oxide thickness using calculated and measured scattering spectra are provided. Embodiments include depositing an oxide over a semiconductor wafer, reducing the oxide from a portion of the semiconductor wafer, and deducing a thickness of oxide remaining at a location within the portion using scatterometric metrology. Embodiments further include deducing the thickness by: calculating scattering spectra for a plurality of oxide thicknesses, producing calculated scattering spectra, monitoring scattering spectra at the location within the portion of the semiconductor wafer, comparing the monitored scattering spectra at the location to the calculated scattering spectra, determining a closest matching calculated scattering spectra to the monitored scattering spectra at the location, and obtaining an oxide thickness corresponding to the closest matching calculated scattering spectra.