The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2014

Filed:

Aug. 10, 2009
Applicants:

Tsutomu Ogihara, Jyoetsu, JP;

Takafumi Ueda, Jyoetsu, JP;

Toshiharu Yano, Jyoetsu, JP;

Inventors:

Tsutomu Ogihara, Jyoetsu, JP;

Takafumi Ueda, Jyoetsu, JP;

Toshiharu Yano, Jyoetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/004 (2006.01); C08G 77/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.


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