The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Mar. 16, 2010
Gang He, Cupertino, CA (US);
Gregg Higashi, San Jose, CA (US);
Khurshed Sorabji, San Jose, CA (US);
Roger Hamamjy, San Jose, CA (US);
Andreas Hegedus, Burlingame, CA (US);
Gang He, Cupertino, CA (US);
Gregg Higashi, San Jose, CA (US);
Khurshed Sorabji, San Jose, CA (US);
Roger Hamamjy, San Jose, CA (US);
Andreas Hegedus, Burlingame, CA (US);
Alta Devices, Inc., Sunnyvale, CA (US);
Abstract
Chemical vapor deposition (CVD) processes include, in one embodiment, a method for processing a wafer within a vapor deposition reactor comprising heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly.