The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2014
Filed:
Sep. 15, 2011
Taichi Monden, Yamanashi, JP;
Junichi Kitagawa, Yamanashi, JP;
Jun Yamashita, Yamanashi, JP;
Hideo Nakamura, Yamanashi, JP;
Taichi Monden, Yamanashi, JP;
Junichi Kitagawa, Yamanashi, JP;
Jun Yamashita, Yamanashi, JP;
Hideo Nakamura, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusionis formed at an inner peripheral surface of a cover member. The extended protrusionis formed toward a plasma generation space S and serves as a facing electrode facing an electrodewithin a mounting tablewith the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.