The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jul. 05, 2011
Applicants:
Thomas Ernst, Morette, FR;
Paul-henry Morel, Corenc, FR;
Sylvain Maitrejean, Grenoble, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 23/522 (2006.01); H01L 29/06 (2006.01); H01L 29/775 (2006.01); H01L 23/525 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/8221 (2013.01); H01L 29/42392 (2013.01); H01L 21/02532 (2013.01); H01L 21/823487 (2013.01); H01L 2221/1094 (2013.01); H01L 21/02653 (2013.01); H01L 21/02603 (2013.01); H01L 29/78642 (2013.01); H01L 21/02425 (2013.01); H01L 29/66439 (2013.01); H01L 21/02639 (2013.01); H01L 23/5226 (2013.01); H01L 29/66666 (2013.01); H01L 29/0676 (2013.01); H01L 29/775 (2013.01); H01L 27/105 (2013.01); H01L 21/76802 (2013.01); H01L 29/0665 (2013.01); H01L 40/00 (2013.01); H01L 10/00 (2013.01); H01L 21/0262 (2013.01); H01L 23/525 (2013.01);
Abstract
A microelectronic device, including: a substrate and a plurality of metal interconnection levels stacked on the substrate; a first metal line of a given metal interconnection level; a second metal line of another metal interconnection level located above the given metal interconnection level, the first and second lines are interconnected via at least one semiconductor connection element extending in a direction forming a nonzero angle with the first metal lines and the second metal line; and a gate electrode capable of controlling conduction of the semiconductor connection element.