The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Sep. 27, 2005
Yen-hao Shih, Changhua County, TW;
Hang-ting Lue, Hsinchu, TW;
Erh-kun Lai, Taichung County, TW;
Kuang Yeu Hsieh, Hsin Chu, TW;
Yen-Hao Shih, Changhua County, TW;
Hang-Ting Lue, Hsinchu, TW;
Erh-Kun Lai, Taichung County, TW;
Kuang Yeu Hsieh, Hsin Chu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A non-volatile memory device on a semiconductor substrate may include a bottom oxide layer over the substrate, a middle layer of silicon nitride over the bottom oxide layer, and a top oxide layer over the middle layer. The bottom oxide layer may have a hydrogen concentration of up to 5E19 cmand an interface trap density of up to 5E11 cmeV. The three-layer structure may be a charge-trapping structure for the memory device, and the memory device may further include a gate over the structure and source and drain regions in the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile