The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Sep. 28, 2012
Applicant:
Sumitome Electric Device Innovations, Inc., Yokohama, JP;
Inventor:
Keita Matsuda, Yokohama, JP;
Assignee:
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 2224/05558 (2013.01); H01L 2924/01029 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05015 (2013.01); H01L 24/05 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/03848 (2013.01); H01L 24/13 (2013.01); H01L 2224/05155 (2013.01); H01L 24/11 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/03552 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05005 (2013.01);
Abstract
A semiconductor device includes: a foundation layer that is provided on a substrate and is electrically conductive; a nickel layer provided on the foundation layer; and a solder provided on the nickel layer, the nickel layer having a first region on a side of the foundation layer and a second region on a side of the solder, the second region being harder than the first region.