The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jul. 15, 2013
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Jonathan Gerald England, Horsham, GB;
Andrew M. Waite, Beverly, MA (US);
Simon Ruffell, Hamilton, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
Methods to implant ions into the sidewall of a three dimensional high aspect ratio feature, such as a trench or via, are disclosed. The methods utilize a phenomenon known as knock-in, which causes a first species of ions, already disposed in the fill material, to become implanted in the sidewall when these ions are struck by ions of a second species being implanted into the fill material. In some embodiments, these first species and second species have similar masses to facilitate knock-in. In some embodiments, the entire hole is not completely filled with fill material. Rather, some fill material is deposited, an ion implant is performed to cause knock-in to the sidewall adjacent to the deposited fill material, and the process is repeated until the hole is filled.