The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Nov. 08, 2013
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Erdem Arkun, San Carlos, CA (US);
Radek Roucka, Mountain View, CA (US);
Rytis Dargis, Fremont, CA (US);
Andrew Clark, Los Altos, CA (US);
Erdem Arkun, San Carlos, CA (US);
Radek Roucka, Mountain View, CA (US);
Translucent, Inc., Palo Alto, CA (US);
Abstract
A method of growing GaN material on a silicon substrate includes providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10° offset surface orientation and using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate. The single crystal stress managing layer includes rare earth oxide with a (110) crystal orientation and a cubic crystal structure. The method further includes epitaxially growing a single crystal buffer layer on the stress managing layer. The single crystal buffer layer includes rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer. Epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation.