The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jul. 22, 2011
Mei-hsuan Lin, Tainan, TW;
Chih-hsun Lin, Tainan, TW;
Chih-kang Chao, Tainan, TW;
Ling-sung Wang, Tainan, TW;
Mei-Hsuan Lin, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Chih-Kang Chao, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
Abstract
An embodiment of the disclosure includes a method of forming a semiconductor structure. A substrate has a region adjacent to a shallow trench isolation (STI) structure in the substrate. A patterned mask layer is formed over the substrate. The patterned mask layer covers the STI structure and a portion of the region, and leaves a remaining portion of the region exposed. A distance between an edge of the remaining portion and an edge of the STI structure is substantially longer than 1 nm. The remaining portion of the region is etched thereby forms a recess in the substrate. A stressor is epitaxially grown in the recess. A conductive plug contacting the stressor is formed.