The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Mar. 04, 2013
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventor:
Masahito Kanamura, Isehara, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/207 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/2003 (2013.01); H01L 21/36 (2013.01); H01L 21/02321 (2013.01); H01L 29/66462 (2013.01); H01L 29/207 (2013.01); H01L 29/36 (2013.01); H01L 29/778 (2013.01); H01L 21/022 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device includes: a first semiconductor layer formed over a substrate; a second semiconductor layer formed over the first semiconductor layer; an insulating film including a first insulating film formed over the second semiconductor layer, a second insulating film, and a third insulating film stacked sequentially over the first insulating film, and an electrode formed over the insulating film, wherein, in the first insulating film, a region containing halogen ions is formed under a region provided with the electrode, and the third insulating film contains a halogen.