The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Sep. 30, 2012
Tokyo Electron Limited, Tokyo, JP;
Genji Nakamura, Delmar, NY (US);
Toshio Hasegawa, Delmar, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Embodiments of the invention provide dual workfunction semiconductor devices and methods for manufacturing thereof. According to one embodiment, the method includes providing a substrate containing first and second device regions, depositing a dielectric film on the substrate, and forming a first metal-containing gate electrode film on the dielectric film, wherein a thickness of the first metal-containing gate electrode film is less over the first device region than over the second device region. The method further includes depositing a second metal-containing gate electrode film on the first metal-containing gate electrode film, patterning the second metal-containing gate electrode film, the first metal-containing gate electrode film, and the dielectric film to form a first gate stack above the first device region and a second gate stack above the second device region.