The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Jul. 08, 2011
Applicants:

Alan Ritchie, Menlo Park, CA (US);

Karl Brown, San Jose, CA (US);

John Pipitone, Livermore, CA (US);

Inventors:

Alan Ritchie, Menlo Park, CA (US);

Karl Brown, San Jose, CA (US);

John Pipitone, Livermore, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01); H01L 21/285 (2006.01); H01J 37/34 (2006.01); H01L 21/768 (2006.01); C23C 14/34 (2006.01); C23C 14/04 (2006.01); C23C 14/35 (2006.01); C23C 16/503 (2006.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/2855 (2013.01); H01J 37/3408 (2013.01); H01L 21/76865 (2013.01); C23C 14/34 (2013.01); C23C 14/046 (2013.01); C23C 16/56 (2013.01); C23C 14/354 (2013.01); C23C 16/503 (2013.01); C23C 14/3492 (2013.01); H01J 2237/3327 (2013.01); H01L 21/76873 (2013.01); C23C 14/345 (2013.01); C23C 16/52 (2013.01);
Abstract

Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.


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