The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Feb. 01, 2012
Applicants:

George Liu, Shin-chu, TW;

Kuei Shun Chen, Hsinchu, TW;

Inventors:

George Liu, Shin-chu, TW;

Kuei Shun Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a semiconductor structure includes forming a photoresist layer over a substrate. The photoresist layer includes a first material removable by a removal process. The first material at a guard band portion of the photoresist layer along an edge portion of the photoresist layer is converted to a second material. The second material is not removable by the removal process. Also, the first material at the edge portion of the photoresist layer is not converted to the second material. The guard band portion is farther from a periphery of the substrate than the edge portion. The removal process is performed to remove the first material after the conversion of the guard band portion.


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