The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Mar. 10, 2010
Tsung-yi Huang, Hsinchu, TW;
Huan-ping Chu, Hsinchu, TW;
Ching-yao Yang, Zhubei, TW;
Hung-der Su, Zhudong Township, Hsinchu County, TW;
Tsung-Yi Huang, Hsinchu, TW;
Huan-Ping Chu, Hsinchu, TW;
Ching-Yao Yang, Zhubei, TW;
Hung-Der Su, Zhudong Township, Hsinchu County, TW;
Richtek Technology Corporation, R.O.C., Hsinchu, TW;
Abstract
The present invention discloses an LDMOS device having an increased punch-through voltage and a method for making same. The LDMOS device includes: a substrate; a well of a first conductive type formed in the substrate; an isolation region formed in the substrate; a body region of a second conductive type in the well; a source in the body region; a drain in the well; a gate structure on the substrate; and a first conductive type dopant region beneath the body region, for increasing a punch-through voltage.