The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Mar. 07, 2012
Ying-hung Chou, Tainan, TW;
Shao-hua Hsu, Taoyuan County, TW;
Chi-horn Pai, Tainan, TW;
Zen-jay Tsai, Tainan, TW;
Shih-hao Su, Kaohsiung, TW;
Chun-chia Chen, Taichung, TW;
Shih-chieh Hsu, New Taipei, TW;
Chih-chung Chen, Tainan, TW;
Ying-Hung Chou, Tainan, TW;
Shao-Hua Hsu, Taoyuan County, TW;
Chi-Horn Pai, Tainan, TW;
Zen-Jay Tsai, Tainan, TW;
Shih-Hao Su, Kaohsiung, TW;
Chun-Chia Chen, Taichung, TW;
Shih-Chieh Hsu, New Taipei, TW;
Chih-Chung Chen, Tainan, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed.