The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 01, 2013
Subhas Chandra Bose Jayappa Veeramma, Lampertheim, DE;
Subhas Chandra Bose Jayappa Veeramma, Lampertheim, DE;
IXYS Corporation, Milpitas, CA (US);
Abstract
A power device (such as a power diode) has a peripheral die area and a central area. The main PN junction of the device is formed by a P+ type region that extends down into an N− type layer. The central portion of the P+ type region has a plurality of openings so mesa structures of the underlying N− type material extend up to the semiconductor surface through the openings. Due to the mesa structures being located in the central portion of the die, there are vertically extending extensions of the PN junction in the central portion of the die. Minority carrier charge storage is more uniform per unit area across the surface of the die. Due to the form of the P+ type region and the mesa structures, the reverse recovery of the PN junction exhibits a soft characteristic.