The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Jul. 24, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Mei-Hsuan Lin, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Chih-Kang Chao, Tainan, TW;
Ling-Sung Wang, Tainan, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76822 (2013.01); H01L 21/76834 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 21/76826 (2013.01); H01L 21/76825 (2013.01);
Abstract
A semiconductor structure includes a substrate, a conductive feature over the substrate, a conductive plug structure contacting a portion of an upper surface of the conductive feature, a first etch stop layer over another portion of the upper surface of the conductive feature, and a second etch stop layer over the first etch stop layer. The first etch stop layer is a doped etch stop layer. The first etch stop layer is to function as an etch stop layer during a predetermined etching process for etching the second etch stop layer.