The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Jul. 01, 2011
Chieh-te Chen, Kaohsiung, TW;
Yi-po Lin, Tainan, TW;
Feng-yih Chang, Tainan, TW;
Chih-wen Feng, Tainan, TW;
Shang-yuan Tsai, Kaohsiung, TW;
Chieh-Te Chen, Kaohsiung, TW;
Yi-Po Lin, Tainan, TW;
Feng-Yih Chang, Tainan, TW;
Chih-Wen Feng, Tainan, TW;
Shang-Yuan Tsai, Kaohsiung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
In an exemplary method for forming contact holes, a substrate overlaid with an etching stop layer and an interlayer dielectric layer in that order is firstly provided. A first etching process then is performed to form at least a first contact opening in the interlayer dielectric layer. A first carbon-containing dielectric layer subsequently is formed overlying the interlayer dielectric layer and filling into the first contact opening. After that, a first anti-reflective layer and a first patterned photo resist layer are sequentially formed in that order overlying the carbon-containing dielectric layer. Next, a second etching process is performed by using the first patterned photo resist layer as an etching mask to form at least a second contact opening in the interlayer dielectric layer.