The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Apr. 13, 2011
Norma E. Sosa Cortes, New York, NY (US);
Edward W. Kiewra, Verbank, NY (US);
Masaharu Kobayashi, Yorktown Heights, NY (US);
Kuen-ting Shiu, White Plains, NY (US);
Norma E. Sosa Cortes, New York, NY (US);
Edward W. Kiewra, Verbank, NY (US);
Masaharu Kobayashi, Yorktown Heights, NY (US);
Kuen-Ting Shiu, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present disclosure provides a buried channel semiconductor structure in which a crystallographic wet etch is used to tailor the profile of etched regions formed into a multilayered substrate which includes a compound semiconductor layer located atop a buried semiconductor channel material layer. The use of crystallographic wet etching on a compound semiconductor allows one to tailor the shape of a source recess region and a drain recess region formed into a multilayered substrate. This allows for the control of gate overlap/underlap. Also, the use of crystallographic wet etching on a compound semiconductor allows independent control of the length of an underlying buried semiconductor channel region.