The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Mar. 16, 2013
Applicants:

Tsung-yi Huang, HsinChu, TW;

Huan-ping Chu, Hsinchu, TW;

Inventors:

Tsung-Yi Huang, HsinChu, TW;

Huan-Ping Chu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66681 (2013.01); H01L 29/7835 (2013.01); H01L 29/0847 (2013.01); H01L 29/66659 (2013.01); H01L 29/1083 (2013.01); H01L 29/42368 (2013.01);
Abstract

The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate, wherein the substrate has an upper surface. The high voltage device includes: a second conductive type buried layer, which is formed in the substrate; a first conductive type well, which is formed between the upper surface and the buried layer; and a second conductive type well, which is connected to the first conductive type well and located at different horizontal positions. The second conductive type well includes a well lower surface, which has a first part and a second part, wherein the first part is directly above the buried layer and electrically coupled to the buried layer; and the second part is not located above the buried layer and forms a PN junction with the substrate.


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