The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Jul. 31, 2012
Applicants:

Jih-perng Leu, Taipei, TW;

Chih-wei Luo, Hsinchu, TW;

Chih Wang, Taichung, TW;

Jwo-huei Jou, Taipei, TW;

Inventors:

Jih-perng Leu, Taipei, TW;

Chih-Wei Luo, Hsinchu, TW;

Chih Wang, Taichung, TW;

Jwo-Huei Jou, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
B82Y 30/00 (2013.01); H01L 33/42 (2013.01); B82Y 40/00 (2013.01); Y10S 977/84 (2013.01); Y10S 977/888 (2013.01); Y10S 977/889 (2013.01); Y10S 977/901 (2013.01);
Abstract

A simple method is developed in the present invention for fabricating periodic ripple microstructures on the surface of an ITO film by using single-beam femtosecond laser pulses. The periodic ripple microstructures composed of self-organized nanodots can be directly fabricated through the irradiation of the femtosecond laser, without scanning. The ripple spacing of ˜800 nm, ˜400 nm and ˜200 nm observed in the periodic ripple microstructures can be attributed to the interference between the incident light and the scattering light of the femtosecond laser from the surface of the ITO film. In the present invention, the self-organized dots are formed by the constructive interference formed in the surface of the ITO film, where includes higher energy to break the In—O and Sn—O bonds and then form the In—In bonds. Therefore, the dots have higher surface current greater than other disconstructive regions of the ITO film.


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