The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Sep. 19, 2011
Applicant:
Upendra Avachat, Sunnyvale, CA (US);
Inventor:
Upendra Avachat, Sunnyvale, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/0296 (2006.01); H01L 31/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0296 (2013.01); H01L 31/1832 (2013.01); H01L 21/0256 (2013.01);
Abstract
Methods for developing and investigating materials and processes for various layers used in manufacturing CdTe, CIGS, and CZTS TFPV superstrate devices using high productivity combinatorial techniques is described. Typical layers subjected to the HPC techniques include the buffer layers, absorber layers, and the contact interface layers.