The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Jun. 24, 2013
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Esin Terzioglu, San Diego, CA (US);

Gregory Ameriada Uvieghara, Murrieta, CA (US);

Sei Seung Yoon, San Diego, CA (US);

Balachander Ganesan, Mountain View, CA (US);

Anil Chowdary Kota, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01);
Abstract

A fuse-based memory includes a plurality of bit lines. Each bit lines couples to a corresponding plurality of fuses. The fuses couple to ground through corresponding access transistors. The memory is configured to precharge an accessed one of the bit lines and a reference one of the bit lines using a low voltage supply. In contrast, a resulting voltage difference between the accessed bit line and the reference bit line is sensed using a sense amplifier powered by a high voltage supply, wherein a high voltage supplied by the high power supply is greater than a low voltage supplied by the low voltage supply.


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